ZVN2110G sot223 n-channel enhancement mode vertical dmos fet issue 3 C october 1995 j features * 6a pulse drain current * fast switching speed partmarking detail - zvn2110 complementary type - zvp2110g absolute maximum ratings. parameter symbol value unit drain-source voltage v ds 100 v continuous drain current at t amb =25c i d 500 ma pulsed drain current i dm 6a gate source voltage v gs 20 v power dissipation at t amb =25c p tot 2w operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. drain-source breakdown voltage bv dss 100 v i d =1ma, v gs =0v gate-source threshold voltage v gs(th) 0.8 2.4 v i d =1ma, v ds = v gs gate-body leakage i gss 0.1 20 na v gs = 20v, v ds =0v zero gate voltage drain current i dss 1 100 m a m a v ds =100v, v gs =0 v ds =80v, v gs =0v, t=125c(2) on-state drain current(1) i d(on) 1.5 2 av ds =25v, v gs =10v static drain-source on-state resistance (1) r ds(on) 4 w v gs =10v, i d =1a forward transconductance (1)(2) g fs 250 350 ms v ds =25v, i d =1a input capacitance (2) c iss 59 75 pf common source output capacitance (2) c oss 16 25 pf v ds =25 v, v gs =0v, f=1mhz reverse transfer capacitance (2) c rss 4 8pf turn-on delay time (2)(3) t d(on) 4 7ns v dd ? 25v, i d =1a rise time (2)(3) t r 4 8ns turn-off delay time (2)(3) t d(off) 8 13 ns fall time (2)(3) t f 8 13 ns drain-source diode characteristics parameter symbol min. typ. max. unit conditions. diode forward voltage (1) v sd 0.82 vi s =0.32a, v gs =0 reverse recovery time t rr 112 ns i f =0.32a, v gs =0, i r =0.1a (1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. (3) switching times measured with 50 w source impedance and <5ns rise time on a pulse generator ZVN2110G d d s g typical characteristics output characteristics v ds - drain source voltage (volts) transfer characteristics 2 46810 020 406080100 saturation characteristics v ds- drain source voltage (volts) voltage saturation characteristics v gs- gate source voltage (volts) v gs- gate source voltage (volts) v ds - drain source voltage (volts) 02 46810 2.8 2.4 1.6 0.4 0 0.8 2.0 1.2 i d( o n ) -on-state drain current (amps) v ds= 10v 0 10 6 2 4 8 02 46810 i d= 1a 500ma 100ma i d( o n ) -on-state drain current (amps) i d( o n ) -on-state drain current (amps) normalised r ds(on) and v gs(th) v temperature t j -junction temperature (c) normalised r d s(o n ) a nd v g s(th) -40 -20 0 20 40 60 80 120 100 140 160 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 drai n - s o u rce r e s i s ta n c e r ds( o n ) ga te t h res h o l d v o l t a g e v g s( th ) i d= 1 a v gs= 10v i d= 1ma v gs= v ds 180 0 0.8 0.4 1.2 2.0 1.6 8v 9v 7v 5v 4v 6v 3v 5v 4v 8v 6v 9v 7v v gs= 0 0.8 0.4 1.2 2.0 1.6 on-resistance v gate-source voltage v gs- gate source voltage (volts) rds(on)-drain source resistance ( w ) 1 10 100 500ma i d = 1a 100ma 1 10 5 v gs= 10v 3v 10v v ds= 25v 3 - 388 3 - 387
ZVN2110G sot223 n-channel enhancement mode vertical dmos fet issue 3 C october 1995 j features * 6a pulse drain current * fast switching speed partmarking detail - zvn2110 complementary type - zvp2110g absolute maximum ratings. parameter symbol value unit drain-source voltage v ds 100 v continuous drain current at t amb =25c i d 500 ma pulsed drain current i dm 6a gate source voltage v gs 20 v power dissipation at t amb =25c p tot 2w operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. drain-source breakdown voltage bv dss 100 v i d =1ma, v gs =0v gate-source threshold voltage v gs(th) 0.8 2.4 v i d =1ma, v ds = v gs gate-body leakage i gss 0.1 20 na v gs = 20v, v ds =0v zero gate voltage drain current i dss 1 100 m a m a v ds =100v, v gs =0 v ds =80v, v gs =0v, t=125c(2) on-state drain current(1) i d(on) 1.5 2 av ds =25v, v gs =10v static drain-source on-state resistance (1) r ds(on) 4 w v gs =10v, i d =1a forward transconductance (1)(2) g fs 250 350 ms v ds =25v, i d =1a input capacitance (2) c iss 59 75 pf common source output capacitance (2) c oss 16 25 pf v ds =25 v, v gs =0v, f=1mhz reverse transfer capacitance (2) c rss 4 8pf turn-on delay time (2)(3) t d(on) 4 7ns v dd ? 25v, i d =1a rise time (2)(3) t r 4 8ns turn-off delay time (2)(3) t d(off) 8 13 ns fall time (2)(3) t f 8 13 ns drain-source diode characteristics parameter symbol min. typ. max. unit conditions. diode forward voltage (1) v sd 0.82 vi s =0.32a, v gs =0 reverse recovery time t rr 112 ns i f =0.32a, v gs =0, i r =0.1a (1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. (3) switching times measured with 50 w source impedance and <5ns rise time on a pulse generator ZVN2110G d d s g typical characteristics output characteristics v ds - drain source voltage (volts) transfer characteristics 2 46810 020 406080100 saturation characteristics v ds- drain source voltage (volts) voltage saturation characteristics v gs- gate source voltage (volts) v gs- gate source voltage (volts) v ds - drain source voltage (volts) 02 46810 2.8 2.4 1.6 0.4 0 0.8 2.0 1.2 i d( o n ) -on-state drain current (amps) v ds= 10v 0 10 6 2 4 8 02 46810 i d= 1a 500ma 100ma i d( o n ) -on-state drain current (amps) i d( o n ) -on-state drain current (amps) normalised r ds(on) and v gs(th) v temperature t j -junction temperature (c) normalised r d s(o n ) a nd v g s(th) -40 -20 0 20 40 60 80 120 100 140 160 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 drai n - s o u rce r e s i s ta n c e r ds( o n ) ga te t h res h o l d v o l t a g e v g s( th ) i d= 1 a v gs= 10v i d= 1ma v gs= v ds 180 0 0.8 0.4 1.2 2.0 1.6 8v 9v 7v 5v 4v 6v 3v 5v 4v 8v 6v 9v 7v v gs= 0 0.8 0.4 1.2 2.0 1.6 on-resistance v gate-source voltage v gs- gate source voltage (volts) rds(on)-drain source resistance ( w ) 1 10 100 500ma i d = 1a 100ma 1 10 5 v gs= 10v 3v 10v v ds= 25v 3 - 388 3 - 387
ZVN2110G typical characteristics transconductance v drain current i d(on) - drain current (amps ) g fs -t r ans c o n ducta n c e ( m s) g fs -t r ans c o n ducta n c e ( m s) q-charge (nc) transconductance v gate-source voltage v gs -gate source voltage (volts) v gs - ga te so ur ce v o l t age (v olts) gate charge v gate-source voltage 0 10 8 6 2 0 4 12 14 16 v ds = 20v i d= 1a 50v 80v 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 0.2 0.4 0.6 0.8 1.0 v ds= 25v 0 100 200 400 300 500 02 46810 v ds= 25v 0 300 200 100 400 500 v ds -drain source voltage (volts) capacitance v drain-source voltage c-capacita n ce ( p f ) c oss c iss c rss 0 10 20 30 40 50 60 40 20 80 100 3 - 389
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